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W19B320AT/B
8.8 Erase and Program Operation
PARAMETER
SYM.
MIN.
70ns
TYP.
MAX.
UNIT
Write Cycle Timing (Note 1)
Address setup Time
Address Setup Timing to #OE low during toggle bit
polling
Address Hold Time
Address Hold Time From #CE or #OE high during
toggle bit polling
Data Setup Time
Data Hold Time
Output Enable High During toggle bit polling
Read Recovery Time Before Write ( #OE High to
#WE Low)
#CE Setup Time
#CE HOLD Time
Write Pulse Width
Write Pulse Width High
Latency Between Read and Write Operation
T WC
T AS
T ASO
T AH
T AHT
T DS
T DH
T OEPH
T GHWL
T CS
T CH
T WP
T WPH
T SR/W
70
0
15
45
0
35
0
20
0
0
0
30
30
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Programming Time (Note 2)
Accelerated Programming Time (Noe2)
Byte
Word
Byte
Word
T PB
T PW
T ACCP
5
7
4
-
-
-
μ s
μ s
μ s
Sector Erase Time (Note 2)
V DD Setup Time (Note 1)
Write Recovery Time from RY/#BY
Program/Erase Valid to RY/#BY Delay
T SE
T VCS
T RB
T BUSY
-
50
0
90
0.4
-
-
-
-
-
-
-
sec
μ s
ns
ns
Notes:
1.
2.
Not 100 % tested
See the “Alternate #CE Controlled Erase and Program Operations“ section for more information
8.9 Temporary Sector Unprotect
PARAMETER
VID Rise and Fall Time
VHH Rise and Fall Time
#RESET Setup Time for Temporary Sector Unprotect
#RESET Hold Time from RY/#BY High for Temporary
Sector Unprotect
SYM.
T VIDR
T VHH
T RSP
T RRB
MIN.
500
250
4
4
MAX.
-
-
-
-
UNIT
ns
ns
μ s
μ s
Note: Not 100 % tested
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功能描述:IC FLASH 32MBIT 70NS 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ
